Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures
نویسندگان
چکیده
منابع مشابه
Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures
The Landauer-Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimen...
متن کاملSpin-polarized tunnelling, magnetoresistance and interfacial effects in ferromagnetic junctions
The pioneering studies of spin-polarized tunnelling by Meservey and Tedrow in the early 1970s showed that the conduction electrons in ferromagnetic (FM) metals are spin polarized and that the spin is conserved in the tunnelling process. Only recently (1995) improved material fabrication techniques have permitted realization of the JullieÁ re quantitative model, showing that tunnelling in ferrom...
متن کاملSpin-polarized Scanning Tunnelling Microscopy of Ultrathin Films
Using low temperature spin-polarized scanning tunneling microscopy we have studied the morphology and magnetic properties of ultrathin Fe(0.5 ML)Au(0.5 ML) nanowires prepared on a Mo(110) single crystal. The Fe nanostripes grown by step flow on a Mo(110) at 700 K were covered by Au at RT, and subsequently annealed at 700 K. Differences in the morphology of Au on Fe(110)/Mo(110) and clean Mo(110...
متن کاملCalculation for Energy of (111) Surfaces of Palladium in Tight Binding Model
In this work calculation of energetics of transition metal surfaces is presented. The tight-binding model is employed in order to calculate the energetics. The tight-binding basis set is limited to d orbitals which are valid for elements at the end of transition metals series. In our analysis we concentrated on electronic effects at temperature T=0 K, this means that no entropic term will be pr...
متن کاملPhotoinduced spin-polarized current in InSb-based structures
We demonstrate the observation of spin-polarized photocurrent in InSb films grown on GaAs and InP substrates and InSb quantum wells where a nonequilibrium spin population has been achieved by using circularly polarized radiation. The characteristics of our observations indicated that the circular photo galvanic effect could be responsible for the generation of the photocurrents. © 2009 American...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physica E: Low-dimensional Systems and Nanostructures
سال: 2006
ISSN: 1386-9477
DOI: 10.1016/j.physe.2005.12.074